| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| PS0.25-5 |
High Speed epitaxy Low Dark curren 0.25mm active area
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| SKM200GAXXXD SKM100GAXXXD SKM300GAXXXD SKM400GAXXX |
SEMITRANS IGBT Modules New Range
|
Semikron International
|
| SKM50GH063DL SKM50GD063DL SKM50GDL063DL |
SEMITRANS M Superfast NPT-IGBT Modules
|
SEMIKRON[Semikron International]
|
| 2SD874A |
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
| FCX591 |
Power Collector dissipation: PC=1W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
